Gate-controlled gas sensor utilizing 1D–2D hybrid nanowires network

iScience

Un Jeong Kim¹  Myung Gwan Hahm²  Young Lae Kim³  Changkyoo Park⁴  Seung Hyun Nam⁵  Seung Gyu Kim⁵  Moonsang Lee⁵  Jin-Young Kim⁵  Sang Sub Kim⁵  Juyeon Seo⁵  Dong-Woo Seo⁶ 

[1] Corresponding author;Advanced Sensor Laboratory, Samsung Advanced Institute of Technology, Suwon 443-803, Republic of Korea;Department of Electronic Engineering, Gangneung-Wonju National University, Gangneung 25457, Republic of Korea;Department of Laser and Electron Beam Technologies, Korea Institute of Machinery and Materials, Daejeon 34103, Republic of Korea;Department of Materials Science and Engineering, Inha University, 100 Inha-ro, Michuhol-gu, Incheon 22212, Republic of Korea;Korea Institute of Civil Engineering and Building Technology, 283 Goyangdae-ro, Goyang-Si, Gyeonggi-Do 10223, Republic of Korea;

关键词: Sensor;    Nanotechnology;    Biotechnology;   

DOI  :  

来源: DOAJ

【 摘 要 】

Summary: Novel gas sensors that work at room temperature are attracting attention due to their low energy consumption and stability in the presence of toxic gases. However, the development of sensing characteristics at room temperature is still a primary challenge. Diverse reaction pathways and low adsorption energy for gas molecules are required to fabricate a gas sensor that works at room temperature with high sensitivity, selectivity, and efficiency. Therefore, we enhanced the gas sensing performance at room temperature by constructing hybridized nanostructure of 1D–2D hybrid of SnSe2 layers and SnO2 nanowire networks and by controlling the back-gate bias (Vg = 1.5 V). The response time was dramatically reduced by lowering the energy barrier for the adsorption on the reactive sites, which are controlled by the back gate. Consequently, we believe that this research could contribute to improving the performance of gas sensors that work at room temperature.

【 授权许可】

Unknown