Characterization of High Energy Irradiated MOS Structures Using the Capacitance Methods

Advances in Electrical and Electronic Engineering

关键词: energy;    mos;    radiation;    structures.;   

DOI  :  

来源: DOAJ

【 摘 要 】

The formation and annealing of radiation-induced defects in MOS structures exposed to 710 MeV Bi ions and 305 MeV Kr ions radiation with a fluency of 10^9 and 10^10cm^2 have been studied by capacitance methods. Electrical activity of the defects has braought increase of interface trap density Dit and a sharp decrease in the generation parameters tr and τg. The parameters of nine deep levels were detected in the investigation MOS structures. Eight of these levels were radiation defects.

【 授权许可】

Unknown