期刊论文详细信息
Opto-Electronic Advances
Field distribution of the Z2 topological edge state revealed by cathodoluminescence nanoscopy
Bo Xu1  Jin Zhang1  Biye Xie2  Hongfei Wang2  Minghui Lu2  Liheng Zheng3  Zheyu Fang3  Xiao He3  Donglin Liu3  Zhixin Liu3  Meiling Jiang3 
[1] College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China;National Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, China;School of Physics, State Key Lab for Mesoscopic Physics, Academy for Advanced Interdisciplinary Studies, Collaborative Innovation Center of Quantum Matter, and Nano-optoelectronics Frontier Center of Ministry of Education, Peking University Yangtze Delta Institute of Optoelectronics, Peking University, Beijing 100871, China;
关键词: photonic topological insulator;    edge state;    cathodoluminescence;    tmdc;   
DOI  :  10.29026/oea.2022.210015
来源: DOAJ
【 摘 要 】

Photonic topological insulators with robust boundary states can enable great applications for optical communication and quantum emission, such as unidirectional waveguide and single-mode laser. However, because of the diffraction limit of light, the physical insight of topological resonance remains unexplored in detail, like the dark line that exists with the crystalline symmetry-protected topological edge state. Here, we experimentally observe the dark line of the Z2 photonic topological insulator in the visible range by photoluminescence and specify its location by cathodoluminescence characterization, and elucidate its mechanism with the p-d orbital electromagnetic field distribution which calculated by numerical simulation. Our investigation provides a deeper understanding of Z2 topological edge states and may have great significance to the design of future on-chip topological devices.

【 授权许可】

Unknown   

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