Generic Compact Model of Double-Gate MOSFETs Applicable to Different Operation Modes and Channels

Sensors & Transducers

Mansun Chan¹  Lining Zhang²  Chenyue Ma²  Jian Zhang²  Xing Zhang³  Xingye Zhou³  Jin He³ 

[1] Department of ECE, Hong Kong University of Science & Technology, Kowloon, Hong Kong;Institute of Microelectronics, School of EECS, Peking University, Beijing 100871, P. R. China;Key Laboratory of Integrated Microsystems, Shenzhen Graduate School of Peking University, Shenzhen 518055, P. R. China;

关键词: Generic compact model;    Double-gate (DG) MOSFET;    Operation modes;    Doped;    Undoped;   

DOI  :  

来源: DOAJ

【 摘 要 】

In this paper, the Double-Gate MOSFET’s operation modes such as symmetric, asymmetric and independent-gate-operation are discussed and an idea for the generic compact model development is proposed. It is shown that the presented model predicts different operation modes and characteristics of DG MOSEETs with channels from heavily doped to intrinsic case, which are well verified by the 2-D numerical simulator.

【 授权许可】

Unknown