Enhanced Boost Factor for Three-Level Quasi-Switched Boost T-Type Inverter

Energies

Vinh-Thanh Tran¹  Duc-Tri Do¹  Minh-Khai Nguyen¹ 

[1] Faculty of Electrical and Electronics Engineering, Ho Chi Minh City University of Technology and Education, Ho Chi Minh City 700000, Vietnam;

关键词: third harmonic injection;    single-stage inverter;    shoot-through;    three-level inverter;    quasi-switched boost;    T-type inverter;   

DOI  :  10.3390/en14133920

来源: DOAJ

【 摘 要 】

A new modulation strategy has been introduced in this paper in order to enhance the boost factor for the three-level quasi-switched boost T-type inverter (3L-qSBT²I). Under this approach, the component rating of power devices is significantly decreased. Moreover, the use of a larger boost factor produces a smaller shoot-through current. This benefit leads to reducing the conduction loss significantly. Furthermore, the neutral voltage unbalance is also considered. The duty cycle of two active switches of a quasi-switched boost (qSB) network is redetermined based on actual capacitor voltages to recovery balance condition. Noted that the boost factor will not be affected by the proposed capacitor voltage balance strategy. The proposed method is taken into account to be compared with other previous studies. The operation principle and overall control strategy for this configuration are also detailed. The simulation and experiment are implemented with the help of PSIM software and laboratory prototype to demonstrate the accuracy of this strategy.

【 授权许可】

Unknown