Two High-Precision Proximity Capacitance CMOS Image Sensors with Large Format and High Resolution

Sensors

Yoshiaki Watanabe¹  Masahiro Yamamoto¹  Yuki Sugama¹  Rihito Kuroda¹  Naoya Kuriyama²  Shigetoshi Sugawa³  Tetsuya Goto³  Hiroshi Hamori⁴  Toshiro Yasuda⁴ 

[1] Graduate School of Engineering, Tohoku University, 6-6-11-811, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Miyagi, Japan;LAPIS Semiconductor Co., Ltd., 2-4-8, Shin-Yokohama, Kohoku-ku, Yokohama 222-8575, Kanagawa, Japan;New Industry Creation Hatchery Center, Tohoku University, 6-6-10, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Miyagi, Japan;OHT Inc., 1118-1, Nishinakajo, Kannabe-cho, Fukuyama 720-2103, Hiroshima, Japan;

关键词: CMOS;    proximity capacitance;    image sensor;    high precision;    large format;    high resolution;   

DOI  :  10.3390/s22072770

来源: DOAJ

【 摘 要 】

This paper presents newly developed two high-precision CMOS proximity capacitance image sensors: Chip A with 12 μm pitch pixels with a large detection area of 1.68 cm²; Chip B with 2.8 μm pitch 1.8 M pixels for a higher resolution. Both fabricated chips achieved a capacitance detection precision of less than 100 zF (10⁻¹⁹ F) at an input voltage of 20 V and less than 10 zF (10⁻²⁰ F) at 300 V due to the noise cancelling technique. Furthermore, by using multiple input pulse amplitudes, a capacitance detection dynamic range of up to 123 dB was achieved. The spatial resolution improvement was confirmed by the experimentally obtained modulation transfer function for Chip B with various line and space pattens. The examples of capacitance imaging using the fabricated chips were also demonstrated.

【 授权许可】

Unknown