Low-Threshold, High-Power On-Chip Tunable III-V/Si Lasers with Integrated Semiconductor Optical Amplifiers

Applied Sciences

Jean Decobert¹  Pierre Fanneau de la Horie¹  Claire Besancon¹  Jean-Guy Provost¹  Nicolas Vaissière¹  Joan Manel Ramírez¹  David Bitauld¹  Delphine Néel¹  Christophe Jany²  Stéphane Malhouitre²  Karim Hassan² 

[1] III-V Lab, Avenue Augustin Fresnel 1, F91767 Palaiseau, France;Université Grenoble Alpes, CEA, LETI, F38054 Grenoble, France;

关键词: heterogeneous integration;    silicon photonics;    widely tunable lasers;    semiconductor optical amplifiers;    on-chip co-integration;    narrow linewidth lasers;   

DOI  :  10.3390/app112311096

来源: DOAJ

【 摘 要 】

Heterogeneously integrated III-V/Si lasers and semiconductor optical amplifiers (SOAs) are key devices for integrated photonics applications requiring miniaturized on-chip light sources, such as in optical communications, sensing, or spectroscopy. In this work, we present a widely tunable laser co-integrated with a semiconductor optical amplifier in a heterogeneous platform that combines AlGaInAs multiple quantum wells (MQWs) and InP-based materials with silicon-on-insulator (SOI) wafers containing photonic integrated circuits. The co-integrated device is compact, has a total device footprint of 0.5 mm², a lasing current threshold of 10 mA, a selectable wavelength tuning range of 50 nm centered at λ = 1549 nm, a fiber-coupled output power of 10 mW, and a laser linewidth of ν = 259 KHz. The SOA provides an on-chip gain of 18 dB/mm. The total power consumption of the co-integrated devices remains below 0.5 W even for the most power demanding lasing wavelengths. Apart from the above-mentioned applications, the co-integration of compact widely tunable III-V/Si lasers with on-chip SOAs provides a step forward towards the development of highly efficient, portable, and low power systems for wavelength division multiplexed passive optical networks (WDM-PONs).

【 授权许可】

Unknown