Bias Switchable Dual-Band InAs/GaSb Superlattice Detector With pBp Architecture

IEEE Photonics Journal

N. Gautam¹  E. A. Plis²  S. Krishna²  S. Myers³  S. S. Krishna⁴ 

[1]  $^{2}$Center for High Technology Materials, Department of Electrical and Computer Engineering , University of New Mexico, Albuquerque, NM, USA;$^{1}$SK Infrared, LLC, Lobo Venture Lab 801, Albuquerque, NM, USA;Center for High Technology Materials, Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM, USA;SK Infrared, LLC, Lobo Venture Lab 801, Albuquerque, NM, USA;

关键词: Optoelectronic materials;    nanostructures;    InAs/GaSb strained layer superlattices (SLS);   

DOI  :  10.1109/JPHOT.2011.2125949

来源: DOAJ

【 摘 要 】

We report on a dual-band [mid/long-wave infrared (MWIR and LWIR)] InAs/GaSb strained layer superlattice detector with a pBp architecture. Fifty percent cutoff wavelengths of 5 and 9 μm were obtained with diffusion-limited behavior for midwave IR absorber. At 77 K, the peak D* values were equal to 5 × 10¹¹ Jones (V_b = +0.1 V, λ = 5 μm) and 2.6 × 1010 Jones (V_b = -0.4 V, λ = 9 μm). The corresponding values of responsivity and quantum efficiency were 1.6 A/W and 39% (MWIR) and 1.3 A/W and 17% (LWIR).

【 授权许可】

Unknown