Reliable Ohmic Contact Properties for Ni/Hydrogen-Terminated Diamond at Annealing Temperature up to 900 °C

Coatings

Xiaolu Yuan¹  Junjun Wei¹  Jinlong Liu¹  Chengming Li¹  Jiangwei Liu²  Yasuo Koide²  Bo Da³ 

[1] Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China;Research Center for Functional Materials, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan;Research and Services Division of Materials Data and Integrated System, NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan;

关键词: hydrogen-terminated diamond (H-diamond);    ohmic contact;    Ni;    specific contact resistance;    high-temperature;   

DOI  :  10.3390/coatings11040470

来源: DOAJ

【 摘 要 】

Ohmic contact with high thermal stability is essential to promote hydrogen-terminated diamond (H-diamond) electronic devices for high-temperature applications. Here, the ohmic contact characteristics of Ni/H-diamond at annealing temperatures up to 900 °C are investigated. The measured current–voltage curves and deduced specific contact resistance (ρ_C) are used to evaluate the quality of the contact properties. Schottky contacts are formed for the as-received and 300 °C-annealed Ni/H-diamonds. When the annealing temperature is increased to 500 °C, the ohmic contact properties are formed with the ρ_C of 1.5 × 10⁻³ Ω·cm² for the Ni/H-diamond. As the annealing temperature rises to 900 °C, the ρ_C is determined to be as low as 6.0 × 10⁻⁵ Ω·cm². It is believed that the formation of Ni-related carbides at the Ni/H-diamond interface promotes the decrease in ρ_C. The Ni metal is extremely promising to be used as the ohmic contact electrode for the H-diamond-based electronic devices at temperature up to 900 °C.

【 授权许可】

Unknown