Analysis the scatter parameter of SOI RF switch with different design structure

Dianzi Jishu Yingyong

Xin Haiwei¹  Liu Zhangli¹ 

[1] Shanghai Huahong Grace Semiconductor Manufacturing Corporation，Shanghai 201203，China;

关键词: SOI;    RF switch;    scatter parameter;    IL;    isolation;   

DOI  :  10.16157/j.issn.0258-7998.181774

来源: DOAJ

【 摘 要 】

Based on commercial 0.2 μm SOI RF process platform, the influence of stack, width, bias resistance and bias voltage on scatter parameter characteristics of test structure for SOI RF switch application is investigated, including series branch, shunt branch, single-pole-single-throw, and single-pole-double-throw. The impacts of different design on RF switch insertion loss and isolation are discussed in detail. The result can be reference as device optimization and circuit design.

【 授权许可】

Unknown