Ionization and Attachment Coefficients in C4F7N Gas Measured by the Steady-State Townsend Method

Applied Sciences

Zhenyu Shen¹  Cheng Chen¹  Yunxiang Long¹  Liping Guo¹  Wenjun Zhou²  Zhaoyu Qin³ 

[1] Hubei Key Laboratory of Nuclear Solid Physics, Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, China;School of Electrical Engineering and Automation, Wuhan University, Wuhan 430072, China;Wuhan NARI Limited Company of State Grid Electric Power Research Institute, Wuhan 430074, China;

关键词: C₄F₇N;    ionization coefficient;    attachment coefficient;    critical electric field;    steady-state Townsend method;    ionization;    plasma;    gas discharge;    high voltage;    SF₆;   

DOI  :  10.3390/app9183686

来源: DOAJ

【 摘 要 】

The normalized Townsend first ionization coefficient α/N and normalized attachment coefficient η/N in pure C₄F₇N were measured by using the steady-state Townsend (SST) method for a range of reduced electric fields E/N from 750 to 1150 Td at room temperature (20 °C). Meanwhile, the effective ionization coefficients are obtained. All SST experimental results show good agreement with pulsed Townsend (PT) experiment results. Comparisons of the critical electric fields of C₄F₇N with SF₆ and other alternative gases such as c-C₄F₈ and CF₃I indicate that C₄F₇N has a better insulation performance with a much higher normalized critical electric field at 959.19 Td.

【 授权许可】

Unknown