Band‐tailored van der Waals heterostructure for multilevel memory and artificial synapse

InfoMat

Xu Lian¹  Tengyu Jin²  Xuan Pan²  Jing Gao²  Wei Chen²  Yanan Wang²  Huipeng Chen³  Enlong Li³  Yue Zheng⁴  Cheng Han⁴ 

[1] Department of Chemistry National University of Singapore Singapore Singapore;Department of Physics National University of Singapore Singapore Singapore;National and Local United Engineering Lab of Flat Panel Display Technology Institute of Optoelectronic Display, Fuzhou University Fuzhou China;SZU‐NUS Collaborative Innovation Center for Optoelectronic Science and Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education Institute of Microscale Optoelectronics, Shenzhen University Shenzhen China;

关键词: artificial synapse;    band engineering;    three‐terminal floating gate memory;    tin disulfide;    van der Waals heterostructure;   

DOI  :  10.1002/inf2.12230

来源: DOAJ

【 摘 要 】

Abstract Two‐dimensional (2D) van der Waals heterostructure (vdWH)‐based floating gate devices show great potential for next‐generation nonvolatile and multilevel data storage memory. However, high program voltage induced substantial energy consumption, which is one of the primary concerns, hinders their applications in low‐energy‐consumption artificial synapses for neuromorphic computing. In this study, we demonstrate a three‐terminal floating gate device based on the vdWH of tin disulfide (SnS2), hexagonal boron nitride (h‐BN), and few‐layer graphene. The large electron affinity of SnS2 facilitates a significant reduction in the program voltage of the device by lowering the hole‐injection barrier across h‐BN. Our floating gate device, as a nonvolatile multilevel electronic memory, exhibits large on/off current ratio (~105), good retention (over 104 s), and robust endurance (over 1000 cycles). Moreover, it can function as an artificial synapse to emulate basic synaptic functions. Further, low energy consumption down to ~7 picojoule (pJ) can be achieved owing to the small program voltage. High linearity (<1) and conductance ratio (~80) in long‐term potentiation and depression (LTP/LTD) further contribute to the high pattern recognition accuracy (~90%) in artificial neural network simulation. The proposed device with attentive band engineering can promote the future development of energy‐efficient memory and neuromorphic devices.

【 授权许可】

Unknown