High Performance ${\beta}$ -Ga2O3 Nano-Membrane Field Effect Transistors on a High Thermal Conductivity Diamond Substrate

IEEE Journal of the Electron Devices Society

Marko J. Tadjer¹  James C. Culbertson¹  Mengwei Si²  Sami Alajlouni²  Ali Shakouri²  Hagyoul Bae²  Peide D. Ye²  Jinhyun Noh²  Hong Zhou²  Peter A. Bermel² 

[1] Electronics Science and Technology Division, United States Naval Research Laboratory, Washington, DC, USA;School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA;

关键词: β-Ga₂O₃FET;    diamond;    nano-membrane;    thermal conductivity;    self-heating effect;   

DOI  :  10.1109/JEDS.2019.2933369

来源: DOAJ

【 摘 要 】

To suppress severe self-heating under high power density, we herein demonstrate top-gate nano-membrane β-gallium oxide (β-Ga₂O₃) field effect transistors on a high thermal conductivity diamond substrate. The devices exhibit enhanced performance, with a record high maximum drain current of 980 mA/mm for top-gate β-Ga₂O₃ field effect transistors and 60% less temperature increase from reduced self-heating, compared to the device on a sapphire substrate operating under identical power density. With improved heat dissipation, β-Ga₂O₃ field effect transistors on a diamond substrate are validated using an ultrafast high-resolution thermoreflectance imaging technique, Raman thermography, and thermal simulations.

【 授权许可】

Unknown