Oxygen source-oriented control of atmospheric pressure chemical vapor deposition of VO2 for capacitive applications

Journal of Electrochemical Science and Engineering

Emmanouil Koudoumas¹  Dimitris Louloudakis²  Dimitra Vernardou³  Nikolaos Katsarakis³  Antonia Bei⁴ 

[1] Department of Electrical Engineering, School of Applied Technology, Technological Educational Institute of Crete, 710 04 Heraklion, Creteand Institute of Electronic Structure & Laser, Foundation for Research & Technology- Hellas, P.O. Box 1527, Vassilika Vouton, 711 10 Heraklion, Crete;Center of Materials Technology and Photonics, School of Engineering, Technological Educational Institute of Crete, 710 04 Heraklion, Crete and Department of Physics, University of Crete 711 00 Heraklion, Crete;Center of Materials Technology and Photonics, School of Engineering, Technological Educational Institute of Crete, 710 04 Heraklion, Crete;Department of Mechanical Engineering, School of Applied Technology, Technological Educational Institute of Crete, 710 04 Heraklion, Crete;

关键词: Atmospheric pressure chemical vapor deposition;    O2 source;    Vanadium dioxide;    Electrochemical properties.;   

DOI  :  10.5599/jese.278

来源: DOAJ

【 摘 要 】

Vanadium dioxides of different crystalline orientation planes have successfully been fabricated by chemical vapor deposition at atmospheric pressure using propanol, ethanol and O2 gas as oxygen sources. The thick a-axis textured monoclinic vanadium dioxide obtained through propanol presented the best electrochemical response in terms of the highest specific discharge capacity of 459 mAh g-1 with a capacitance retention of 97 % after 1000 scans under constant specific current of 2 A g-1. Finally, the electrochemical impedance spectroscopy indicated that the charge transfer of Li+ through the vanadium dioxide / electrolyte interface was easier for this sample enhancing significantly its capacitance performance.

【 授权许可】

Unknown