A One-Dimensional Effective Model for Nanotransistors in Landauer–Büttiker Formalism

Micromachines

Ulrich Wulf¹ 

[1] Department of Computational Physics, Brandenburg University of Technology Cottbus-Senftenberg, PO box 101344, 03013 Cottbus, Germany;

关键词: nanotransistor;    quantum transport;    Landauer–Büttiker formalism;    R-matrix method;   

DOI  :  10.3390/mi11040359

来源: DOAJ

【 摘 要 】

In a series of publications, we developed a compact model for nanotransistors in which quantum transport in a variety of industrial nano-FETs was described quantitatively. The compact nanotransistor model allows for the extraction of important device parameters as the effective height of the source-drain barrier, device heating, and the quality of the coupling between conduction channel and the contacts. Starting from a basic description of quantum transport in a multi-terminal device in Landauer–Büttiker formalism, we give a detailed derivation of all relevant formulas necessary to construct our compact nanotransistor model. Here we make extensive use of the the R-matrix method.

【 授权许可】

Unknown