The Design of CMOS-Compatible Plasmonic Waveguides for Intra-Chip Communication

IEEE Photonics Journal

Christian A. Nijhuis¹  Yu Cao²  Baohu Huang³  Yan Liu⁴  Dongyang Wan⁴  Aaron Voon-Yew Thean⁴  Guanghui Yuan⁴  Ting Mei⁴  Lu Ding⁵  Thirumalai Venkatesan⁶  Soojin Chua⁷ 

[1] and Shaanxi Key Laboratory of Optical Information Technology, School of Science, Northwestern Polytechnical University, Xi&x0027;STAR (Agency for Science, Technology and Research), SingaporeSingapore;Centre for Disruptive Photonic Technologies, The Photonic Institute, School of Physical and Mathematical Sciences, Nanyang Technological University, SingaporeSingapore;Department of Electrical and Computer Engineering, National University of Singapore, SingaporeSingapore;Institute of Materials Research and Engineering, A^{&x002A;Key Laboratory of Space Applied Physics and Chemistry, Ministry of Education;an, China;}

关键词: CMOS-compatible plasmonic waveguide;    Long-range SPP;    high integration density;    Signal latency;    Energy dissipation;    Link throughput;   

DOI  :  10.1109/JPHOT.2020.3024119

来源: DOAJ

【 摘 要 】

A CMOS-compatible plasmonic waveguide with a metal or metal-like strip sandwiched in-between dielectrics has been proposed for intra-chip communication in the more-than-Moore era. A sequence of numerical models has been presented to evaluate the plasmonic waveguide performance. For device-level consideration, we demonstrated through simulations that Cu (1450 nm pitch) and PLD-TiN (900 nm pitch) plasmonic waveguides symmetrically sandwiched by SiO₂ with much smaller and hence denser interconnects, are promising candidates for use in global wires for the asynchronous communication. This design of plasmonic waveguide can bridge the CMOS circuitry and high-speed communication at optical frequencies within chip. For a system-level assessment, both of them have the same bandwidth throughput of ~19.8 Gbps. The other performance parameters of Cu and PLD-TiN plasmonic waveguides are respectively, signal latency of ~0.18 ps and 0.19 ps, energy dissipation per computing bit of ~2.5 × 10^-3 fJ/bit and 3.8 × 10^-3 fJ/bit, and 25% crosstalk coupling length of 155 μm and 125 μm. These findings suggest that plasmonic waveguide for intra-chip communication surpass those of existing electronic interconnects for all the categories of performance parameters.

【 授权许可】

Unknown