Evaluation of Silicon Nanonet Field Effect Transistor as Photodiodes

Proceedings

Mehrdad Irannejad¹  Muhammed Kayaharman¹  Mustafa Yavuz¹  Sangtak Park²  Eihab Abdel-Rahman³  Maxime Legallais⁴  Celine Ternon⁴  Bassem Salem⁵ 

[1] Department of Mechanical and Mechatronics Engineering, University of Waterloo, Waterloo, ON N2L 3G1, Canada;Department of Systems Design Engineering, University of Waterloo, Waterloo, ON N2L 3G1, Canada;University of Grenoble Alpes, CNRS, Grenoble INP—Institute of Engineering Univ. Grenoble Alpes, IMEP-LaHC, F-38000 Grenoble, France;University of Grenoble Alpes, CNRS, Grenoble INP—Institute of Engineering Univ. Grenoble Alpes, LMGP, F-38000 Grenoble, France;University of Grenoble Alpes, CNRS, LTM, F-38000 Grenoble, France;

关键词: silicon nanowires;    nanonets;    field effect transistors;    characterization;   

DOI  :  10.3390/ecsa-4-04925

来源: DOAJ

【 摘 要 】

Silicon nanowire networks (nanonets) is an emerging candidate technology for sensor applications. In this work, we characterized Field Effect Transistor (FETs) employing silicon nanonet channels and evaluated their performance as photodiodes. We found that shorter and higher density nanonet channels have lower resistance and higher current flow. The drain current of the FETs doubled when irradiated with a continuous wave He-Ne laser (wavelength 632 nm). Finally, we examined the long-term stability of the FETs. The channel resistance increased by one order-of-magnitude after 6 months of storage in open air.

【 授权许可】

Unknown