Study on Black Phosphorus Characteristics Using a Two-Step Thinning Method

Materials

Daming Chen¹  Jincheng Zhang²  Yue Hao²  Qin Lu³  Yifan Jia³  Jiao Fu³  Tengfei Liu³  Haifeng Chen³  Xiangtai Liu³  Shaoqing Wang³  Xiaoyang Li³ 

[1] Departamento de Ingeniería Mecánica, Universidad de Santiago de Chile, Santiago 9160000, Chile;Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China;Key Laboratory of Advanced Semiconductor Devices and Materials, School of Electronic Engineering, Xi’an University of Posts & Telecommunications, Xi’an 710121, China;

关键词: black phosphorus;    mechanical exfoliation;    ultraviolet radiation;    annealing;    field-effect transistor;   

DOI  :  10.3390/ma15020615

来源: DOAJ

【 摘 要 】

A mild two-step method of black phosphorus (BP) flake thinning was demonstrated in this article. Slight ultraviolet–ozone (UVO) radiation followed by an argon plasma treatment was employed to oxidize mechanically exfoliated BP flakes and remove the surface remains of previous ozone treatment. The annealing process introduced aims to reduce impurities and defects. Low damage and efficient electronic devices were fabricated in terms of controlling the thickness of BP flakes through this method. These results lead to an important step toward the fabrication of high-performance devices based on two-dimensioned materials.

【 授权许可】

Unknown