Enhanced electrochemical property of SILAR-deposited Mn3O4 thin films decorated on graphene

Journal of Materials Research and Technology

Fabian Ezema¹  AdaN.C. Agbogu¹  Azubike B.C. Ekwealor²  Ugochi Chime³  Blessing Ezealigo³  Malik Maaza³  Rose U. Osuji³  Paul M. Ejikeme³  Agnes C. Nkele³  Assumpta Nwanya³ 

[1] Nanosciences African Network (NANOAFNET) iThemba LABS-National Research Foundation, 1 Old Faure Road, Somerset West 7129,P.O. Box 722, Somerset West, Western Cape Province, South Africa;UNESCO-UNISA Africa Chair in Nanosciences/Nanotechnology, College of Graduate Studies, University of South Africa (UNISA), Muckleneuk Ridge, P. O. Box 329, Pretoria, South Africa;Department of Physics and Astronomy, University of Nigeria, Nsukka, Nigeria;

关键词: Manganese oxide;    Thin films;    Doping;    Band gap;    Cyclic voltammograms;    Specific capacitance;   

DOI  :  

来源: DOAJ

【 摘 要 】

Manganese oxide and manganese oxide decorated on graphene thin films were successfully synthesized and decorated on graphene via successive ionic layer adsorption and reaction (SILAR) method. The morphological, elemental, structural, optical and electrochemical properties of the deposited films were respectively studied using scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDX, or EDS), X-ray diffractometry (XRD), UV–vis spectrophotometry and a 3-electrode potentiostat. Decorating the manganese oxide film on graphene improved the morphological, structural, optical, and electrochemical features of the deposited films. SEM image revealed irregularly fused capsule-like nanoparticles, EDX spectra confirmed the elemental composition of the films while the structure of the film improved from amorphous to crystalline after decorating on graphene. Optical results showed improved the transmittance and optical band gap values of the films upon decoration on the graphene. Electrochemical studies showed good cyclic voltammograms and a recorded maximum specific capacitance value of 194 F g−1. The films find potential application in electrochemical storage devices and optical devices.

【 授权许可】

Unknown