Silicon Nanowires for Gas Sensing: A Review

Nanomaterials

Mehdi Akbari-Saatlu¹  Göran Thungström¹  Claes Mattsson¹  Hans-Erik Nilsson¹  Henry H. Radamson¹  Marcin Procek¹  Buqing Xu²  Wenjuan Xiong²  You Li² 

[1] Department of Electronics Design, Mid Sweden University, Holmgatan 10, SE-85170 Sundsvall, Sweden;Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China;

关键词: silicon nanowire;    gas sensor;    functionalization;    top-down fabrication;    bottom-up fabrication;    heterostructures;   

DOI  :  10.3390/nano10112215

来源: DOAJ

【 摘 要 】

The unique electronic properties of semiconductor nanowires, in particular silicon nanowires (SiNWs), are attractive for the label-free, real-time, and sensitive detection of various gases. Therefore, over the past two decades, extensive efforts have been made to study the gas sensing function of NWs. This review article presents the recent developments related to the applications of SiNWs for gas sensing. The content begins with the two basic synthesis approaches (top-down and bottom-up) whereby the advantages and disadvantages of each approach have been discussed. Afterwards, the basic sensing mechanism of SiNWs for both resistor and field effect transistor designs have been briefly described whereby the sensitivity and selectivity to gases after different functionalization methods have been further presented. In the final words, the challenges and future opportunities of SiNWs for gas sensing have been discussed.

【 授权许可】

Unknown