Comparison of Magnesium and Titanium Doping on Material Properties and pH Sensing Performance on Sb2O3 Membranes in Electrolyte-Insulator-Semiconductor Structure

Membranes

Jun-Ru Chen¹  Hsiang Chen¹  Shih-Ming Chen¹  Yaw-Wen Kuo²  Ming-Ling Lee³  Kuan-Lin Chen⁴  Chyuan-Haur Kao⁴  Lukas Jyuhn-Hsiarn Lee⁵ 

[1] Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Puli 545, Taiwan;Department of Electrical Engineering, National Chi Nan University, Puli 545, Taiwan;Department of Electro-Optical Enginnering, Minghsin University of Science and Technology, No.1, Xinxing Rd., Xinfeng 304, Taiwan;Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan District, Tao Yuan City 333, Taiwan;National Institute of Environmental Health Sciences, National Health Research Institutes, Zhunan 350, Taiwan;

关键词: Mg doping;    Ti doping;    pH sensing;    Sb₂O₃;    silicate;    crystallization;   

DOI  :  10.3390/membranes12010025

来源: DOAJ

【 摘 要 】

In this research, electrolyte-insulator-semiconductor (EIS) capacitors with Sb₂O₃ sensing membranes were fabricated. The results indicate that Mg doping and Ti-doped Sb₂O₃ membranes with appropriate annealing had improved material quality and sensing performance. Multiple material characterizations and sensing measurements of Mg-doped and Ti doping on Sb₂O₃ sensing membranes were conducted, including of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). These detailed studies indicate that silicate and defects in the membrane could be suppressed by doping and annealing. Moreover, compactness enhancement, crystallization and grainization, which reinforced the surface sites on the membrane and boosted the sensing factor, could be achieved by doping and annealing. Among all of the samples, Mg doped membrane with annealing at 400 °C had the most preferable material properties and sensing behaviors. Mg-doped Sb₂O₃-based with appropriate annealing are promising for future industrial ionsensing devices and for possible integration with Sb₂O₃-based semiconductor devices.

【 授权许可】

Unknown