Steady-State Simulation of Semiconductor Devices Using Discontinuous Galerkin Methods

IEEE Access

Liang Chen¹  Hakan Bagci¹ 

[1] Division of Computer, Electrical, and Mathematical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia;

关键词: Discontinuous Galerkin method;    drift-diffusion equations;    multiphysics modeling;    Poisson equation;    semiconductor device modeling;   

DOI  :  10.1109/ACCESS.2020.2967125

来源: DOAJ

【 摘 要 】

Design of modern nanostructured semiconductor devices often calls for simulation tools capable of modeling arbitrarily-shaped multiscale geometries. In this work, to this end, a discontinuous Galerkin (DG) method-based framework is developed to simulate steady-state response of semiconductor devices. The proposed framework solves a system of Poisson equation (in electric potential) and stationary drift-diffusion equations (in charge densities), which are nonlinearly coupled via the drift current and the charge distribution. This system is “decoupled” and “linearized” using the Gummel method and the resulting equations are discretized using a local DG scheme. The proposed framework is used to simulate geometrically intricate semiconductor devices with realistic models of mobility and recombination rate. Its accuracy is demonstrated by comparing the results to those obtained by the finite volume and finite element methods implemented in a commercial software package.

【 授权许可】

Unknown