Thermoelectric properties of Mott insulator with correlated hopping at microdoping

Condensed Matter Physics

关键词: thermoelectric effects;    mott insulators;    localization;    falicov-kimball model;    correlated hopping;    dynamical mean field theory;   

DOI  :  10.5488/CMP.23.13703

来源: DOAJ

【 摘 要 】

An influence of the localization of itinerant electrons induced by correlated hopping on the electronic charge and heat transport is discussed for the lightly doped Mott insulator phase of the Falicov-Kimball model. The case of strongly reduced hopping amplitude between the sites with occupied f-electron levels, when an additional band of localized d-electron states could appear on the DOS in the Mott gap, is considered. Due to the electron-hole asymmetry and anomalous features on the DOS and transport function induced by correlated hopping, a strong enhancement of the Seebeck coefficient is observed at low temperatures, when the flattened dependence is displayed in a wide temperature range.

【 授权许可】

Unknown