IEEE Photonics Journal | |
Optical Power Monitoring with Ultrahigh Sensitivity in Silicon Waveguides and Ring Resonators | |
Linjie Zhou1  Dong Li1  Liangjun Lu1  Jianping Chen1  | |
[1] State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, China; | |
关键词: Silicon nanophotonics; waveguide devices; Photodetectors; waveguides.; | |
DOI : 10.1109/JPHOT.2017.2728183 | |
来源: DOAJ |
【 摘 要 】
We demonstrate optical power monitoring using a silicon resistor enabled by the surface and defect states-induced photoconductance effect. Ultrahigh optical power detection sensitivity of −40 dBm under a low AC drive voltage of 5 mV is obtained with the facilitation of a lock-in amplifier circuitry. The detection scheme is applied to monitor the resonances in single and coupled-ring resonators. Intracavity resonance spectrum is successfully measured at both the static and the thermal tuning conditions. The demonstration opens a compelling new way for nonintrusive on-chip optical power detection by exploiting doped silicon resistor-based thermooptic heaters.
【 授权许可】
Unknown