Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

Nanoscale Research Letters

Kar Seng Teng¹  Shu Ping Lau²  Shengyi Yang³  Yiqun Zhao³  Libin Tang³ 

[1] College of Engineering, Swansea University;Department of Applied Physics, The Hong Kong Polytechnic University;School of Physics, Beijing Institute of Technology;

关键词: GeTe;    Heterojunction;    Optoelectronic characteristics;    Photovoltaic detector;   

DOI  :  10.1186/s11671-020-03336-7

来源: DOAJ

【 摘 要 】

Abstract GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofilms were grown by magnetron sputtering technique and characterized to investigate its physical, electrical, and optical properties. A high-performance infrared photovoltaic detector based on GeTe/Si heterojunction with the detectivity of 8 × 1011 Jones at 850 nm light irradiation at room temperature was demonstrated.

【 授权许可】

Unknown