Influence of Hydrogen-Nitrogen Hybrid Passivation on the Gate Oxide Film of n-Type 4H-SiC MOS Capacitors

Coatings

Shengjun Sun¹  Qin Lu¹  Yifan Jia¹  Ke Qin¹  Xiangtai Liu¹  Haifeng Chen¹  Shaoqing Wang¹  Yunhe Guan¹  Xiaoyan Tang²  Yuming Zhang² 

[1] Key Laboratory of Advanced Semiconductor Devices and Materials, School of Electronic Engineering, Xi’an University of Posts and Telecommunications, Xi’an 710121, China;The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China;

关键词: 4H-SiC MOS capacitors;    hydrogen-nitrogen hybrid passivation;    interface characteristics;    gate oxide integrity;   

DOI  :  10.3390/coatings11121449

来源: DOAJ

【 摘 要 】

Hydrogen-nitrogen hybrid passivation treatment for growing high-property gate oxide films by high-temperature wet oxidation, with short-time NO POA, is proposed and demonstrated. Secondary ion mass spectroscopy (SIMS) measurements show that the proposed method causes hydrogen and appropriate nitrogen atoms to accumulate in Gaussian-like distributions near the SiO₂/SiC interface. Moreover, the hydrogen atoms are also incorporated into the grown SiO₂ layer, with a concentration of approximately 1 × 10¹⁹ cm⁻³. The conductance characteristics indicate that the induced hydrogen and nitrogen passivation atoms near the interface can effectively reduce the density of interface traps and near-interface traps. The current-voltage (I-V), X-ray photoelectron spectroscopy (XPS), and time-dependent bias stress (TDBS) with ultraviolet light (UVL) irradiation results demonstrate that the grown SiO₂ film with the incorporated hydrogen passivation atoms can effectively reduce the density of oxide electron traps, leading to the barrier height being improved and the leakage current being reduced.

【 授权许可】

Unknown