Effect of Quantum Barrier Thickness in the Multiple-Quantum-Well Active Region of GaInN/GaN Light-Emitting Diodes

IEEE Photonics Journal

Guan-Bo Lin¹  Dong-Yeong Kim²  Hyunwook Shim³  Jong Kyu Kim⁴  Qifeng Shan⁵  Jaehee Cho⁵  E. Fred Schubert⁵  Cheolsoo Sone⁶ 

[1] $^{1}$ Future Chips Constellation, Department of Electrical, Computer, and Systems, Engineering, Rensselaer Polytechnic Institute, Troy, NY , USA;$^{2}$ Department of Materials Science and Engineering, Pohang, University of Science and Technology, Pohang, Korea;$^{4}$LED Business, Samsung Electronics, Yongin, Korea;Department of Materials Science and Engineering, Pohang, University of Science and Technology, Pohang, Korea;Future Chips Constellation, Department of Electrical, Computer, and Systems, Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA;LED Business, Samsung Electronics, Yongin, Korea;

关键词: Light emitting diode;    gallium nitride;    efficiency droop;   

DOI  :  10.1109/JPHOT.2013.2276758

来源: DOAJ

【 摘 要 】

The dependence of the polarization-induced electric field in GaInN/GaN multiple-quantum-well light-emitting diodes (LEDs) on the GaN quantum barrier (QB) thickness is investigated. Electrostatic arguments and simulations predict that a thin QB thickness reduces the electric field in the quantum wells (QWs) and also improves the LED efficiency. We experimentally demonstrate that the QW electric field decreases with decreasing QB thickness. The lower electric field results in a better overlap of electron and hole wave functions and better carrier confinement in the QWs. A reduced efficiency droop and enhanced internal quantum efficiency is demonstrated for GaInN/GaN LEDs when the QB thickness is reduced from 24.5 to 9.1 nm.

【 授权许可】

Unknown