Non-perturbative four-wave mixing in InSb with intense off-resonant multi-THz pulses

EPJ Web of Conferences

DOI  :  10.1051/epjconf/20134104004

来源: DOAJ

【 摘 要 】

High-field multi-THz pulses are employed to analyze the coherent nonlinear response of the narrow-gap semiconductor InSb which is driven off-resonantly. Field-resolved four-wave mixing signals manifest the onset of a non-perturbative regime of Rabi flopping at external amplitudes above 5 MV/cm per pulse. Simulations based on a two-level quantum system confirm these experimental results.

【 授权许可】

Unknown