Perpendicular Magnetic Anisotropy and Hydrogenation-Induced Magnetic Change of Ta/Pd/CoFeMnSi/MgO/Pd Multilayers

Nanoscale Research Letters

Huarui Fu¹  Na Tian¹  Li Ma¹  Qing Zhang¹  Caiyin You¹ 

[1] School of Materials Science and Engineering, Xi’an University of Technology;

关键词: Spin gapless semiconductor;    Perpendicular magnetic anisotropy;    Hydrogenation-induced magnetic change;   

DOI  :  10.1186/s11671-018-2628-9

来源: DOAJ

【 摘 要 】

Abstract The perpendicular magnetic anisotropy (PMA) has been achieved in Ta/Pd/CoFeMnSi (CFMS)/MgO/Pd film, in which the Heusler compound CoFeMnSi is one of the most promising candidates for spin gapless semiconductor (SGS). The strong PMA, with the effective anisotropy constant K eff of 5.6 × 105 erg/cm3 (5.6 × 104 J/m3), can be observed in the Ta/Pd/CFMS (2.3 nm)/MgO (1.3 nm)/Pd films annealed at 300 °C. In addition, it was found that the magnetic properties of Ta/Pd/CFMS/MgO/Pd films are sensitive to hydrogen (H2) under a weak magnetic field (< 30 Oe), whose residual magnetization (M r ) decreased from 123.15 to 30.75 emu/cm3 in the atmosphere with H2 concentration of 5%.

【 授权许可】

Unknown