Influence of the Metal–Semiconductor Interface Model on Power Conservation Principle in a Simulation of Bipolar Devices

Electronics

Zbigniew Lisik¹  Jacek Podgorski¹  Janusz Wozny¹ 

[1] Department of Semiconductor and Optoelectronic Devices, Lodz University of Technology, Al. Politechniki 10, 93-590 Lodz, Poland;

关键词: drift-diffusion;    electrothermal;    power conservation;    metal–semiconductor interface;    GaN;    Si;   

DOI  :  10.3390/electronics10243120

来源: DOAJ

【 摘 要 】

The purpose of the study is to present a proper approach that ensures the energy conservation principle during electrothermal simulations of bipolar devices. The simulations are done using Sentaurus TCAD software from Synopsys. We focus on the drift-diffusion model that is still widely used for power device simulations. We show that without a properly designed contact(metal)–semiconductor interface, the energy conservation is not obeyed when bipolar devices are considered. This should not be accepted for power semiconductor structures, where thermal design issues are the most important. The correct model of the interface is achieved by proper doping and mesh of the contact-semiconductor region or by applying a dedicated model. The discussion is illustrated by simulation results obtained for the GaN p–n structure; additionally, Si and SiC structures are also presented. The results are also supported by a theoretical analysis of interface physics.

【 授权许可】

Unknown