Dielectric Relaxation Behavior of BTO/LSMO Heterojunction

Nanomaterials

Yuanyuan Zhang¹  Sheng Li¹  Jing Yang¹  Guoqiang Song¹  Wei Bai¹  Xiaodong Tang¹ 

[1]Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Science, East China Normal University, Shanghai 200241, China

关键词: BaTiO₃;    manganese;    Maxwell-Wagner effect;    magnetoelectric coupling;   

DOI  :  10.3390/nano11051109

来源: DOAJ

【 摘 要 】

The BaTiO₃ (BTO)/La_0.7Sr_0.3MnO₃ (LSMO) magnetoelectric composite films were prepared by sol-gel method on STO (001) substrates. The heterojunction has highly preferred orientation and exhibits well ferroelectric properties with perfect hysteresis loops and microscopic polarization switch behaviors. The most interesting thing is the abnormal dielectric relaxation phenomenon in the dielectric spectra at high frequency range and around the phase transition temperature of LSMO. By analyzing the resistance properties of LSMO films, it is indicated that charge-based interfacial coupling, Maxwell-Wagner effect due to the JT polaron and fast resistivity rise in LSMO layer is the main reason. This work emphasizes the crucial role of resistivity exchanges and of carrier accumulation at interfaces for the application of magnetoelectric heterojunction.

【 授权许可】

Unknown