Formation and Characterization of Hole Nanopattern on Photoresist Layer by Scanning Near-Field Optical Microscope

Nanomaterials

Marian Teodorczyk¹  Agata Roszkiewicz²  Amrita Jain²  Wojciech Nasalski² 

[1] Institute of Electronic Materials Technology (ITME), Wólczyńska 133, 01-919 Warsaw, Poland;Institute of Fundamental Technological Research, Polish Academy of Sciences (IPPT PAN), Adolfa Pawińskiego 5b, 02-106 Warsaw, Poland;

关键词: optical lithography;    photoresist;    quartz;    hole nanopatterning;   

DOI  :  10.3390/nano9101452

来源: DOAJ

【 摘 要 】

Patterning of lines of holes on a layer of positive photoresist SX AR-P 3500/6 (Allresist GmbH, Strausberg, Germany) spin-coated on a quartz substrate is carried out by using scanning near-field optical lithography. A green 532 nm-wavelength laser, focused on a backside of a nanoprobe of 90 nm diameter, is used as a light source. As a result, after optimization of parameters like laser power, exposure time, or sleep time, it is confirmed that it is possible to obtain a uniform nanopattern structure in the photoresist layer. In addition, the lines of holes are characterized by a uniform depth (71−87 nm) and relatively high aspect ratio ranging from 0.22 to 0.26. Numerical modelling performed with a rigorous method shows that such a structure can be potentially used as a phase zone plate.

【 授权许可】

Unknown