Optimization of the SiC Powder Source Material for Improved Process Conditions During PVT Growth of SiC Boules

Materials

Matthias Arzig¹  Johannes Steiner¹  Peter Wellmann¹  Pål Runde²  OdaMarie Ellefsen² 

[1] Crystal Growth Lab, Materials Department 6, Friedrich-Alexander Universität, 91058 Erlangen, Germany;Fiven Norge AS—SIKA, Nordheim, 4792 Lillesand, Norway;

关键词: sic;    source material;    crystal growth;    sublimation;    in situ visualization;   

DOI  :  10.3390/ma12193272

来源: DOAJ

【 摘 要 】

We have studied the influence of different SiC powder size distributions and the sublimation behavior during physical vapor transport growth of SiC in a 75 mm and 100 mm crystal processing configuration. The evolution of the source material as well as of the crystal growth interface was carried out using in situ 3D X-ray computed tomography (75 mm crystals) and in situ 2D X-ray visualization (100 mm crystals). Beside the SiC powder size distribution, the source materials differed in the maximum packaging density and thermal properties. In this latter case of the highest packaging density, the in situ X-ray studies revealed an improved growth interface stability that enabled a much longer crystal growth process. During process time, the sublimation-recrystallization behavior showed a much smoother morphology change and slower materials consumption, as well as a much more stable shape of the growth interface than in the cases of the less dense SiC source. By adapting the size distribution of the SiC source material we achieved to significantly enhance stable growth conditions.

【 授权许可】

Unknown