ITO/SiO2/ITO Structure on a Sapphire Substrate Using the Oxidation of Ultra-Thin Si Films as an Insulating Layer for One-Glass-Solution Capacitive Touch-Screen Panels

Coatings

GueSerb Cho¹  Maddipatla Reddyprakash¹  YiSik Choi¹  Chadrasekhar Loka¹  YoungWoong Jo²  SungWhan Moon²  ShinYong Joo²  SeongEui Lee²  Kee-Sun Lee³ 

[1] Smart Natural Space Research Center, Kongju National University, Cheonan-si 331080, Korea;;Department of Advanced Materials Engineering &Sapphire Technology Co. Ltd., Hwaseong-si 445992, Korea;

关键词: thin film: sputtering;    ito;    sio₂;    low-temperature oxidation;    touch screen panel;    sapphire;    transmittance;   

DOI  :  10.3390/coatings10020134

来源: DOAJ

【 摘 要 】

The SiO₂ generated by low-temperature oxidation of ultra-thin metallic silicon (thickness = 50 nm) film was evaluated for implementation in one-glass-solution capacitive touch-screen panels (OGS-TSPs) on sapphire-based substrates. Our results show that the silicon films oxidized at 823 K exhibited the highest visible transmittance about 91% at 550 nm, compared to ~72% transmittance of the as-deposited silicon films which were deposited at room temperature. Additionally, the annealed films exhibited a more uniform, dense, and smooth surface microstructure than that of the as-deposited Si films. X-ray photoelectron spectroscopy (XPS) results revealed that the low-temperature oxidation of Si films at 823 K yielded SiO₂. Furthermore, when the insulating SiO₂ film obtained by low-temperature oxidation was sandwiched between two indium tin oxide (ITO) layers (ITO/SiO₂/ITO) on a sapphire substrate, the SiO₂ film resulted in the dielectric strength of approximately 3 MV/cm. In addition, the highest optical transmittance obtained by the ITO/SiO₂/ITO films is about 88.3%. The change in capacitance of the ITO/SiO₂/ITO structure was approximately 3.2 pF, which indicates the possibility of implementation in capacitive touch-screen panel devices.

【 授权许可】

Unknown