Wideband Modeling of DC-DC Buck Converter with GaN Transistors

Energies

Pawel B. Derkacz¹  Piotr Musznicki¹  Piotr J. Chrzan¹ 

[1] Faculty of Electrical and Control Engineering, Gdańsk University of Technology, str. Gabriela Narutowicza 11/12, 80-233 Gdańsk, Poland;

关键词: wideband modeling;    converter modeling;    DC-DC converter;    GaN HEMT;    PEEC;   

DOI  :  10.3390/en14154430

来源: DOAJ

【 摘 要 】

The general wideband modeling method of the power converter is presented on the example of DC-DC buck converter with GaN High Electron Mobility Transistors (HEMT). The models of all basic and parasitic components are briefly described. The two methods of Printed Circuit Board (PCB) layout parameter extraction are presented. The results of simulation in Saber@Sketch simulation software and measurements are compared. Next, the model of the converter is reduced to obtain one lumped inductance of the input filter PCB for the analytical prediction of transistor turn-off ringing frequency and overvoltage. The practical use of the model is presented for sizing optimal capacitance of snubber.

【 授权许可】

Unknown