Properties of epitaxial, (001)- and (110)-oriented (PbMg1/3Nb2/3O3)2/3-(PbTiO3)1/3 films on silicon described by polarization rotation

Science and Technology of Advanced Materials

Giulia Lanzara¹  Evert P. Houwman²  Kurt H. Vergeer²  Gertjan Koster²  Guus Rijnders²  Muhammad Boota²  Minh D. Nguyen²  Matthijn Dekkers³ 

[1] Engineering Department, University of Rome “ROMA TRE”;Faculty of Science and Technology, MESA+ Institute for Nanotechnology, University of Twente;SolMates BV;

关键词: pmn-pt;    pulsed laser deposition;    orientation control;    ferroelectricity;    piezoelectricity;    thin film;    epitaxy;   

DOI  :  10.1080/14686996.2016.1140306

来源: DOAJ

【 摘 要 】

Epitaxial (PbMg1/3Nb2/3O3)2/3-(PbTiO3)1/3 (PMN-PT) films with different out-of-plane orientations were prepared using a CeO2/yttria stabilized ZrO2 bilayer buffer and symmetric SrRuO3 electrodes on silicon substrates by pulsed laser deposition. The orientation of the SrRuO3 bottom electrode, either (110) or (001), was controlled by the deposition conditions and the subsequent PMN-PT layer followed the orientation of the bottom electrode. The ferroelectric, dielectric and piezoelectric properties of the (SrRuO3/PMN-PT/SrRuO3) ferroelectric capacitors exhibit orientation dependence. The properties of the films are explained in terms of a model based on polarization rotation. At low applied fields domain switching dominates the polarization change. The model indicates that polarization rotation is easier in the (110) film, which is ascribed to a smaller effect of the clamping on the shearing of the pseudo-cubic unit cell compared to the (001) case.

【 授权许可】

Unknown