Effect of Annealing on Innovative CsPbI3-QDs Doped Perovskite Thin Films

Crystals

Yu-Hao Chen¹  Chien-Jung Huang¹  Na-Fu Wang²  Kuan-Wei Lee³  Pao-Hsun Huang⁴  Shui-Yang Lien⁵ 

[1] Department of Applied Physics, National University of Kaohsiung, Kaohsiung University Rd., Kaohsiung 81148, Taiwan;Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 84008, Taiwan;Department of Electronic Engineering, I-Shou University, Kaohsiung 84001, Taiwan;School of Information Engineering, Jimei University, 183 Yinjiang Road, Jimei, Xiamen 361021, China;School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China;

关键词: perovskite;    solar cell;    quantum dots;    hot injection;    composite thin film;   

DOI  :  10.3390/cryst11020101

来源: DOAJ

【 摘 要 】

In this study, a simple hot-injection method to synthesize high-quality inorganic perovskite cesium lead iodide (CsPbI₃) quantum-dots (QDs) was demonstrated. Adding CsPbI₃ QDs into the organic perovskite methylamine lead triiodide (CH₃NH₃PbI₃) to form a composite perovskite film, annealed by different temperatures, was found to be effectively enhanced by the perovskite crystallization. The intensity of the preferred peak (110) of MAPbI₃ was enhanced by increasing the size of the crystal and reducing the cluster crystal. The densest film can be found at annealing temperature of 140 °C. The full width half maximum of MAPbI₃ and CsPbI₃ was analyzed through XRD peak fitting. This was a huge breakthrough for QDs doped perovskite films.

【 授权许可】

Unknown