A Comparative Study of Single-Event-Burnout for 4H-SiC UMOSFET

IEEE Journal of the Electron Devices Society

Jian-cheng Zhou¹  Mao Lin¹  Jian-Qun Yang²  Xing-ji Li²  Ying Wang³  Fei Cao³ 

[1] Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou, China;National Key Laboratory of Materials Behavior and Evaluation Technology in Space Environment, Harbin Institute of Technology, Harbin, China;School of Information Science and Technology, Dalian Maritime University, Dalian, China;

关键词: 2-D numerical simulation;    SiC power MOSFET;    single-event burnout (SEB);    linear energy transfer (LET);    buff;   

DOI  :  10.1109/JEDS.2022.3158810

来源: DOAJ

【 摘 要 】

SiC UMOSFET is a kind of significant power device in the supply of aerospace. But it is sensitive to space radiation. In this paper, the discrepancy of SEB behavior and research of 4H-SiC UMOSFET with the different values of particle linear energy transfer (LET) are proposed and investigated by the 2D numerical simulations. And the improved MOSFET with multi-Buff was compared with the conventional UMOSFET. At last, simulation results demonstrated that under high-intensity radiation environment (high LET value heavy ion incidence), the proposed UMOSFET could increase the single-event burnout (SEB) hardness, and using the lattice temperature of device as the SEB behavior characterization of the SiC UMOSFET after heavy ion incidence is more reasonable and accurate than only using high steady-state drain current.

【 授权许可】

Unknown