Structural, Optical and Electrical Characterizations of Midwave Infrared Ga-Free Type-II InAs/InAsSb Superlattice Barrier Photodetector

Photonics

R. Alchaar¹  M. Bouschet¹  P. Christol¹  J.P. Perez¹  F. de Anda-Salazar²  U. Zavala-Moran²  I. Ribet-Mohamed³  S. Bernhardt³ 

[1] IES, Univ. Montpellier, CNRS, F-34000 Montpellier, France;IICO, Univ. Autónoma de San Luis Potosí, Av. Karakorum 1470, San Luis Potosí CP 78210, Mexico;ONERA, Chemin de la Hunière, F-91761 Palaiseau, France;

关键词: midwave infrared quantum detector;    barrier structure;    ga-free type-II superlattice;   

DOI  :  10.3390/photonics7030076

来源: DOAJ

【 摘 要 】

In this paper, a full set of structural, optical and electrical characterizations performed on midwave infrared barrier detectors based on a Ga-free InAs/InAsSb type-II superlattice, grown by molecular beam epitaxy (MBE) on a GaSb substrate, are reported and analyzed. a Minority carrier lifetime value equal to 1 µs at 80 K, carried out on dedicated structure showing photoluminescence peak position at 4.9 µm, is extracted from a time resolved photoluminescence measurement. Dark current density as low as 3.2 × 10⁻⁵ A/cm² at 150 K is reported on the corresponding device exhibiting a 50% cut-off wavelength around 5 µm. A performance analysis through normalized spectral response and dark current density-voltage characteristics was performed to determine both the operating bias and the different dark current regimes.

【 授权许可】

Unknown