Growth of Ordered Graphene Ribbons by Sublimation Epitaxy

Crystals

Xin Zheng¹  Xingfang Liu²  Shuxian Cai³  Zhonghua Liu³ 

[1] Key Laboratory of Ministry of Education for Tea Science, Hunan Agricultural University, Changsha 410128, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;National Research Center of Engineering Technology for Utilization of Botanical Functional Ingredients, Hunan Agricultural University, Changsha 410128, China;

关键词: graphene;    ribbon;    4H-SiC;    sublimation;    epitaxy;    Raman;   

DOI  :  10.3390/cryst8120449

来源: DOAJ

【 摘 要 】

Ordered graphene ribbons were grown on the surface of 4° off-axis 4H-SiC wafers by sublimation epitaxy, and characterized by using scanning electron microscopy (SEM), atomic force microscopy (AFM) and micro-Raman spectroscopy (μ-Raman). SEM showed that there were gray and dark ribbons on the substrate surface, and AFM further revealed that these ordered graphene ribbons had clear stepped morphologies due to surface step-bunching. It was shown by μ-Raman that the numbers of graphene layers of these two types of regions were different. The gray region was composed of mono- or bilayer ordered graphene ribbon, while the dark region was of tri- or few-layer ribbon. Meanwhile, ribbons were all homogeneous and had a width up to 40 μm and a length up to 1000 μm, without micro defects such as grain boundaries, ridges, or mono- and few-layer graphene mixtures. The results of this study are useful for optimized growth of high-quality graphene film on silicon carbide crystal.

【 授权许可】

Unknown