Capacitive Photodetector Thin-Film Cells of Cu-As2S3-Cu as Revealed by Dielectric Spectroscopy

Sensors

Nicolae Creţu¹  Sorin Zamfira¹  Gabriel Socol²  Adam Lőrinczi³  Elena Matei³  Paul Ganea³ 

[1] Department of Product Design, Mechatronics and Environment, Transilvania University of Braşov, 29 Eroilor Blvd., RO-500036 Brașov, Romania;National Institute for Laser, Plasma and Radiation Physics, 409Atomistilor St., RO-077125 Magurele, Romania;National Institute of Materials Physics, 405A Atomistilor St., RO-077125 Magurele, Romania;

关键词: a-As₂S₃;    copper ions;    dielectric spectroscopy;    electrical conductivity;    photodetector cell;   

DOI  :  10.3390/s22031143

来源: DOAJ

【 摘 要 】

The As₂S₃-Cu interface was studied by dielectric spectroscopy measurements on Cu-As₂S₃-Cu thin film heterostructure samples to assess the charge carriers’ contribution to the electrical properties of such an interface. Three-dimensional printed masks ensured good reproducibility during the PLD deposition of heterostructure samples. The samples were tested for electrical conductivity and AC photoconductivity by dielectric spectroscopy measurements. DC bias voltages and light were applied to the samples. The electrical capacity of the thin film heterostructure can be modified electrically and optically. We observed long-term photoconductivity with a time dependency that was not exponential, and a quick change of the electrical capacity, indicating the potential of the heterostructure cells as photodetector candidates.

【 授权许可】

Unknown