Azurin/CdSe-ZnS-Based Bio-Nano Hybrid Structure for Nanoscale Resistive Memory Device

Materials

Jeong-Woo Choi¹  Taek Lee²  Ajay Kumar Yagati³ 

[1] Biomolecular Engineering, Sogang University, Shinsu-dong, Mapo-gu, Seoul 04107, Korea;;Department of Chemical &School of Integrative Engineering, Chung-Ang University, Heukseok-dong, Dongjak-gu, Seoul 06974, Korea;

关键词: azurin;    CdSe-ZnS;    scanning tunneling spectroscopy;    bio-nano hybrid structure;    resistive bistable switching;   

DOI  :  10.3390/ma10070803

来源: DOAJ

【 摘 要 】

In the present study, we propose a method for bio-nano hybrid formation by coupling a redox metalloprotein, Azurin, with CdSe-ZnS quantum dot for the development of a nanoscale resistive memory device. The covalent interaction between the two nanomaterials enables a strong and effective binding to form an azurin/CdSe-ZnS hybrid, and also enabled better controllability to couple with electrodes to examine the memory function properties. Morphological and optical properties were performed to confirm both hybrid formations and also their individual components. Current-Voltage (I–V) measurements on the hybrid nanostructures exhibited bistable current levels towards the memory function device, that and those characteristics were unnoticeable on individual nanomaterials. The hybrids showed good retention characteristics with high stability and durability, which is a promising feature for future nanoscale memory devices.

【 授权许可】

Unknown