Optically Integrated InP–Si$_3$ N$_4$ Hybrid Laser

IEEE Photonics Journal

Marcel Hoekman¹  Rene G. Heideman¹  Chris G. H. Roeloffzen²  Jorn P. Epping²  Ruud M. Oldenbeuving²  Peter J. M. van der Slot³  Youwen Fan³  Klaus-J. Boller³  Ronald Dekker⁴ 

[1] LioniX B.V., Enschede, The Netherlands;SatraX B.V., Enschede, The Netherlands;University of Twente, MESA+ Institute for Nanotechnology, Laser Physics and Nonlinear Optics Group, Enschede, The Netherlands;XiO Photonics B.V., Enschede, The Netherlands;

关键词: Tunable lasers;    semiconductor lasers;    waveguide devices.;   

DOI  :  10.1109/JPHOT.2016.2633402

来源: DOAJ

【 摘 要 】

We describe the first demonstration and characterization of an optically integrated InP-Si₃ N₄ hybrid laser. The laser is formed by integration of an InP-based reflective semiconductor optical amplifier with a InP-Si₃ N₄ based feedback waveguide circuit. The circuit comprises a frequency selective and tunable Vernier mirror composed of two microring resonators with slightly different radii. A wide tuning range of more than 43 nm is achieved via the thermo-optic effect. The typical side mode suppression ratio is 35 dB. The narrowest linewidth achieved is about 90 kHz, and the relative intensity noise is less than -135 dBc/Hz.

【 授权许可】

Unknown