Process Optimization of In Situ Magnetic-Anisotropy Spark Plasma Sintering of M-Type-Based Barium Hexaferrite BaFe12O19

Materials

AnwarAmeen Hezam Saeed¹  Soheil Gohari²  HaethamG. Mohammed³  TharMohammed Badri Albarody³  Saiful Prayogi⁴  MuhammadRoil Bilad⁴  Reza Alebrahim⁵  Aris Doyan⁶  Susilawati Susilawati⁶ 

[1] Department of Chemical Engineering, Universiti Teknologi Petronas, Seri Iskandar 32610, Malaysia;Department of Mechanical Engineering, The University of Melbourne, Parkville, VIC 3010, Australia;Department of Mechanical Engineering, Universiti Teknologi Petronas, Seri Iskandar 32610, Malaysia;Faculty of Applied Science and Enginering, Universitas Pendidikan Mandalika, Mataram 83126, Indonesia;Industrial Engineering Department, University of Padova, 35131 Padova, Italy;Master of Science Education Program, University of Mataram, Mataram 83125, Indonesia;

关键词: spark plasma sintering;    sintering parameters;    remanence;    optimization;    magnet;    magnetic properties;   

DOI  :  10.3390/ma14102650

来源: DOAJ

【 摘 要 】

This paper introduces a new spark plasma sintering technique that is able to order crystalline anisotropy by in-series/in situ DC electric coupled magnetic field. The process control parameters have been investigated on the production of anisotropic BaFe₁₂O₁₉ magnets based on resulted remanence (Mr). Sintering holding time (H.T.), cooling rate (C.R.), pressure (P), and sintering temperature (S.T.) are optimized by Taguchi with L9 orthogonal array (OA). The remanent magnetization of nanocrystalline BaFe₁₂O₁₉ in parallel (Mr^ǁ) and perpendicular (Mr^Ʇ) to the applied magnetic field was regarded as a measure of performance. The Taguchi study calculated optimum process parameters, which significantly improved the sintering process based on the confirmation tests of BaFe₁₂O₁₉ anisotropy. The magnetic properties in terms of Mr^ǁ and Mr^Ʇ were greatly affected by sintering temperature and pressure according to ANOVA results. In addition, regression models were developed for predicting the Mr^ǁ as well as Mr^Ʇ respectively.

【 授权许可】

Unknown