Chemical Vapor Deposition of Ferrimagnetic Fe3O4 Thin Films

Crystals

Yuansha Chen¹  Feifei Lan²  Ziyue Qian²  Liming Xie²  Rui Zhou² 

[1] Beijing National Laboratory for Condensed Matter Physics & Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China;

关键词: Fe₃O₄;    ultrathin film;    chemical vapor deposition;    room-temperature ferrimagnetism;    Verwey transition;   

DOI  :  10.3390/cryst12040485

来源: DOAJ

【 摘 要 】

Ultrathin magnetic materials with room-temperature ferromagnetism/ferrimagnetism hold great potential in spintronic applications. In this work, we report the successful controllable growth of Fe₃O₄ thin films using a facile chemical vapor deposition method. Room-temperature ferrimagnetism was maintained in the as-grown Fe₃O₄ thin films down to 4 nm. Raman spectroscopy, X-ray diffraction and X-ray photoelectron spectroscopy analysis were conducted to reveal the structure and quality of the Fe₃O₄ film. Magnetization measurement showed ferrimagnetic hysteresis loops in all Fe₃O₄ thin films. A saturation magnetization of 752 emu/cm³ was observed for the 4 nm Fe₃O₄ film, which was higher than that of bulk Fe₃O₄ materials (480 emu/cm³). Additionally, the Verwey transition at ~120 K was visible for the Fe₃O₄ thin films. This work provides an alternative method of synthesizing ferrimagnetic ultrathin films for electronic, spintronic, and memory device applications.

【 授权许可】

Unknown