| Journal of Shanghai Normal University (Natural Sciences) | |
| Influence of doping of ceria and scandia on the point defects of zirconia based material | |
| Tao Jingchao1  | |
| [1] School of Materials Science and Engineering, Shanghai Jiao Tong University; | |
| 关键词: zirconia; point defect; oxygen vacancy; | |
| DOI : 10.3969/J.ISSN.1000-5137.2017.06.008 | |
| 来源: DOAJ | |
【 摘 要 】
The advanced properties of rare-earth oxide doped zirconia materials are closely related to the different types of point defects which exist in zirconia crystals.These point defects are mainly in the form of oxygen vacancies.The research sample is zirconia doped ceria (ZDC).This kind of doping doesn't result the appearance of oxygen vacancy.But cerium is not a single valence element.It has two possible valences+4 and+3 which results the reducing or oxidizing of Ceria.The reducing and oxidizing of Ceria could result the dissociating of oxygen atom from internal crystal with the variation of oxygen partial pressure and temperature.The second type is hetero-valence doping.The research sample is Scandia stabilized Zirconia (ScSZ).The doping leads to the charge compensation which results the appearance of oxygen vacancy.The concentration of this kind of oxygen vacancy is a constant with the doping ratio of Scandia but not the function of oxygen partial pressure.
【 授权许可】
Unknown