Laser-Induced-Plasma-Assisted Ablation and Metallization on C-Plane Single Crystal Sapphire (c-Al2O3)

Micromachines

Xizhao Lu¹  Qiuling Wen¹  Feng Jiang¹  Tingping Lei¹  Zhong Chen²  Chentao Zhang³  Gaofeng Zheng³  Rui Zhou³ 

[1] College of Mechanical Engineering and Automation, Huaqiao University, Xiamen 361021, China;Department of Electronic Science, Xiamen University, Xiamen 361005, China;School of Aerospace Engineering, Xiamen University, Xiamen 361005, China;

关键词: single crystal sapphire;    laser-induced-plasma-assisted ablation;    repetition rate;    metallization;    micro-machines;   

DOI  :  10.3390/mi8100300

来源: DOAJ

【 摘 要 】

Laser-induced-plasma-assisted ablation (LIPAA) is a promising micro-machining method that can fabricate microstructure on hard and transparent double-polished single crystal sapphire (SCS). While ablating, a nanosecond pulse 1064 nm wavelength laser beam travels through the SCS substrate and bombards the copper target lined up behind the substrate, which excites the ablating plasma. When laser fluence rises and is above the machining threshold of copper but below that of SCS, the kinetic energy of the copper plasma generated from the bombardment is mainly determined by the laser fluence, the repetition rate, and the substrate-to-target distance. With a lower repetition rate, SCS becomes metallized and gains conductivity. When micro-machining SCS with a pulsed laser are controlled by properly controlling laser machining parameters, such as laser fluence, repetition rate, and substrate-to-target distance, LIPAA can ablate certain line widths and depths of the microstructure as well as the resistance of SCS. On the contrary, conductivity resistance of metalized sapphire depends on laser parameters and distance in addition to lower repetition rate.

【 授权许可】

Unknown