Monolithic Integration of Surface Plasmon Detector and Metal–Oxide–Semiconductor Field-Effect Transistors

IEEE Photonics Journal

Kazuaki Sawada¹  Takuma Aihara²  Masato Futagawa³  Ayumi Takeda⁴  Mitsuo Fukuda⁴  Masashi Fukuhara⁴  Byounghyun Lim⁴  Yuya Ishii⁵ 

[1] Graduate Course, Toyohashi University of Technology, Toyohashi, Japan;$^{1}$ Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Japan;$^{3}$Head Office for &x201C;Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Japan;Tailor-Made and Baton-Zone&x201D;

关键词: Surface plasmon polariton;    Schottky barrier;    diffraction grating;    nano-slit;    metal-oxide-semiconductor field-effect transistor;   

DOI  :  10.1109/JPHOT.2013.2272779

来源: DOAJ

【 摘 要 】

The monolithic integration of a silicon-based plasmonic detector with metal- oxide-semiconductor field-effect transistors (MOSFETs) was demonstrated. The plasmonic detector consisted of a gold film with a nanoslit grating on a silicon substrate and was operated at a free-space wavelength of 1550 nm. The structure of the nanoslit grating was optimized by using the finite-difference time-domain method. The output current from the plasmonic detector was amplified by ~14 000 times using the monolithically integrated MOSFETs. In addition, dynamic operation of the integrated circuit was demonstrated by modulation of the intensity of a beam that was incident to the plasmonic detector.

【 授权许可】

Unknown