IEEE Photonics Journal | |
Monolithic Integration of Surface Plasmon Detector and Metal–Oxide–Semiconductor Field-Effect Transistors | |
Kazuaki Sawada1  Takuma Aihara2  Masato Futagawa3  Ayumi Takeda4  Mitsuo Fukuda4  Masashi Fukuhara4  Byounghyun Lim4  Yuya Ishii5  | |
[1] Graduate Course, Toyohashi University of Technology, Toyohashi, Japan; |
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关键词: Surface plasmon polariton; Schottky barrier; diffraction grating; nano-slit; metal-oxide-semiconductor field-effect transistor; | |
DOI : 10.1109/JPHOT.2013.2272779 | |
来源: DOAJ |
【 摘 要 】
The monolithic integration of a silicon-based plasmonic detector with metal- oxide-semiconductor field-effect transistors (MOSFETs) was demonstrated. The plasmonic detector consisted of a gold film with a nanoslit grating on a silicon substrate and was operated at a free-space wavelength of 1550 nm. The structure of the nanoslit grating was optimized by using the finite-difference time-domain method. The output current from the plasmonic detector was amplified by ~14 000 times using the monolithically integrated MOSFETs. In addition, dynamic operation of the integrated circuit was demonstrated by modulation of the intensity of a beam that was incident to the plasmonic detector.
【 授权许可】
Unknown