Effects of Ion Bombardment Energy Flux on Chemical Compositions and Structures of Hydrogenated Amorphous Carbon Films Grown by a Radical-Injection Plasma-Enhanced Chemical Vapor Deposition

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Hiroki Kondo¹  Kenji Ishikawa¹  Hirotsugu Sugiura¹  Takayoshi Tsutsumi¹  Masaru Hori² 

[1] Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;Institute of Innovation for Future Society, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;

关键词: hydrogenated amorphous carbon (a-C:H);    plasma enhanced chemical vapor deposition (PECVD);    ion bombardment energy flux;   

DOI  :  10.3390/c5010008

来源: DOAJ

【 摘 要 】

Hydrogenated amorphous carbon (a-C:H) films have attracted much attention, because of their excellent physical and chemical properties, such as high mechanical hardness, chemical robustness, a wide variety of optical bandgaps, and so forth. Although an ion bombardment energy has been regarded as essential in the well-know subplantation model, it alone is inadequate especially in complicated reactions of a plasma-enhanced chemical vapor deposition process. In this study, an ion bombardment energy flux (Γ_Ei) was proposed as a crucial factor to determine chemical compositions and structures of a-C:H films. To obtain the amounts of Γ_Ei, electron densities, hydrogen (H) excitation temperatures, and negative direct current (DC) self-bias voltage (-V_DC) were measured. The deposition rate increased, and sp²-C clusters incorporation was induced by the Γ_Ei. With increasing Γ_Ei, photoluminescence (PL) backgrounds in Raman spectra decreased, while spin densities in electron spin resonance (ESR) measurements increased. These results suggested the H content of a-C:H film decreased depending on the amount of Γ_Ei. The Γ_Ei is one of the crucial factors to determine the properties of the a-C:H films.

【 授权许可】

Unknown