W18O49 Nanowires as Ultraviolet Photodetector

Nanoscale Research Letters

关键词: W₁₈O₄₉ nanowires;    Field effect transistor;    Ultraviolet photodetector;    Photoconductive gain;    Near-surface depletion region;   

DOI  :  

来源: DOAJ

【 摘 要 】

Abstract

Photodetectors in a configuration of field effect transistor were fabricated based on individual W₁₈O₄₉ nanowires. Evaluation of electrical transport behavior indicates that the W₁₈O₄₉ nanowires are n-type semiconductors. The photodetectors show high sensitivity, stability and reversibility to ultraviolet (UV) light. A high photoconductive gain of 10⁴ was obtained, and the photoconductivity is up to 60 nS upon exposure to 312 nm UV light with an intensity of 1.6 mW/cm². Absorption of oxygen on the surface of W₁₈O₄₉ nanowires has a significant influence on the dark conductivity, and the ambient gas can remarkably change the conductivity of W₁₈O₄₉ nanowire. The results imply that W₁₈O₄₉ nanowires will be promising candidates for fabricating UV photodetectors.

【 授权许可】

Unknown